International Eurasian Academy of Sciences, IEAS

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Tianchun YE
Academician
Tianchun YE
Profile:
Elected Academician of the International Eurasian Academy of Sciences in 2018, Professor Tianchun Ye is a distinguished Chinese microelectronics scientist whose research and professional work have focused on integrated circuit manufacturing technology, advanced semiconductor devices, and micro- and nanofabrication. Born in December 1965, he received his B.Eng. from the Department of Electronic Engineering at Fudan University in 1986 and joined the Microelectronics Centre of the Chinese Academy of Sciences, where he progressed from Assistant Engineer to Research Professor. He also undertook visiting research at the RIKEN Institute in Japan from 1992 to 1993. At the Institute of Microelectronics, CAS, he served as Deputy Director from 2001 to 2007 and Director from 2007 to 2020. He is currently Research Professor and Doctoral Supervisor at the Institute, Dean of the School of Microelectronics at the University of Chinese Academy of Sciences, and Chairman and President of the Greater Bay Area Institute of Integrated Circuits and System Applications in Guangdong Province. He also serves as Vice Chairman of the China Semiconductor Industry Association, a member of the National Advisory Committee on Integrated Circuit Industry Development, and Chief Technologist of the National Science and Technology Major Project on Very Large-Scale Integrated Circuit Manufacturing Equipment and Complete Process Technology, commonly known as the “02” Major Project, which he has led since its launch in 2008. In 2026, he was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) for contributions to advanced device science and technology. His honours also include recognition as an Advanced Worker of the Chinese Academy of Sciences.

Professor Ye’s research has centred on advanced integrated-circuit processes and devices, radiation-hardened circuits, and micro- and nanofabrication technologies. Since the Seventh Five-Year Plan, he has led and participated in more than ten major national research programmes, contributing to developments in deep-submicron and nanoscale fabrication, compound-semiconductor devices, and novel device structures. As Chief Technologist of the “02” Major Project, he was involved in formulating its implementation plan and has coordinated large-scale collaboration among research institutes, universities, and enterprises in the development of integrated-circuit manufacturing equipment and process technologies. The programme has supported advances in high-end manufacturing equipment and advanced process platforms, including technologies at the 14-nanometre level, while strengthening the domestic semiconductor manufacturing supply chain. His research has also addressed the integration of intellectual-property strategy with technology development, including patent portfolios associated with advanced transistor structures such as FinFETs. Professor Ye has received three Second Prizes of the National Technological Invention Award, the Outstanding Science and Technology Achievement Prize of the Chinese Academy of Sciences, and a number of provincial and ministerial awards. He holds more than 120 authorised invention patents, has published more than 300 papers, and has supervised more than 200 master’s and doctoral students. Through sustained research, major national programme leadership, and engagement with industrial technology development, Professor Ye has contributed to advances in integrated-circuit manufacturing and semiconductor device technology and to the development of microelectronics research and innovation capacity in China.