Professor Ye’s research has centred on advanced integrated-circuit processes and devices, radiation-hardened circuits, and micro- and nanofabrication technologies. Since the Seventh Five-Year Plan, he has led and participated in more than ten major national research programmes, contributing to developments in deep-submicron and nanoscale fabrication, compound-semiconductor devices, and novel device structures. As Chief Technologist of the “02” Major Project, he was involved in formulating its implementation plan and has coordinated large-scale collaboration among research institutes, universities, and enterprises in the development of integrated-circuit manufacturing equipment and process technologies. The programme has supported advances in high-end manufacturing equipment and advanced process platforms, including technologies at the 14-nanometre level, while strengthening the domestic semiconductor manufacturing supply chain. His research has also addressed the integration of intellectual-property strategy with technology development, including patent portfolios associated with advanced transistor structures such as FinFETs. Professor Ye has received three Second Prizes of the National Technological Invention Award, the Outstanding Science and Technology Achievement Prize of the Chinese Academy of Sciences, and a number of provincial and ministerial awards. He holds more than 120 authorised invention patents, has published more than 300 papers, and has supervised more than 200 master’s and doctoral students. Through sustained research, major national programme leadership, and engagement with industrial technology development, Professor Ye has contributed to advances in integrated-circuit manufacturing and semiconductor device technology and to the development of microelectronics research and innovation capacity in China.