Elected Academician of the International Eurasian Academy of Sciences in 2020, Professor Huilong Zhu is a Chinese microelectronics expert whose research and professional work have focused on very-large-scale integrated-circuit devices and process technology, modelling and simulation of semiconductor manufacturing processes, and nanoscale devices and advanced process technologies. Born in 1958, he received his bachelor’s degree in physics from the University of Science and Technology of China in 1982 and his doctorate in theoretical physics from Beijing Normal University in 1988. He subsequently conducted research on atomic diffusion, ion implantation, and radiation damage at Beijing Normal University before moving to the United States, where he carried out research at Argonne National Laboratory and the University of Illinois at Urbana-Champaign. His work there included molecular-dynamics studies of ion implantation, atomic diffusion, and nanoparticle sintering, including theoretical analysis of ultrafast sintering at the nanoscale. He subsequently joined Digital Equipment Corporation and Intel, developing models and simulation software for integrated-circuit manufacturing processes, and spent nine years at IBM’s Semiconductor Research and Development Center. At IBM, he proposed technologies for improving transistor performance, including dual stress liners, stress proximity techniques, and gate-thinned strained MOSFETs, and developed models of diffusion in SiGe systems. He was named one of IBM’s company-wide Leading Inventors in 2007 and Master Inventor of its Semiconductor Research and Development Center in 2008, receiving multiple IBM invention and patent awards. He holds more than 190 granted US patents. Recruited through China’s Thousand Talents Programme, he returned to China in 2009 and joined the Institute of Microelectronics of the Chinese Academy of Sciences, where he is Research Professor and Doctoral Supervisor and serves as Chief Scientist of the Resear